CTLDM8120-M621H TR

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Overview of CTLDM8120-M621H TR

Part NumberCTLDM8120-M621H TR
ManufacturerCentral Semiconductor
DescriptionMOSFET P-CH 20V 950MA TLM621H
DatasheetsDownload CTLDM8120-M621H TR Datasheet PDFPDF Icon
Price for CTLDM8120-M621H TR

Specification of CTLDM8120-M621H TR

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Central Semiconductor Corp
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
3.56 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-65C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TLM621H
Package / Case
6-XFDFN Exposed Pad

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